[PD-4-2] Formation of Ultra-Shallow and Low-Leakage p+n Junctions by Low-Temperature Post-Implantation Annealing

Akira NAKADA, Kei KANEMOTO, Mauricio Massazumi OKA, Yukio TAMAI, Tadahiro OHMI (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University, 2.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1996.PD-4-2