New Electrically-Thinned Intrinsic-Channel SOI MOSFET with 0.01μm Channel Length

Tamio SHIMATANI; Sergey PIDIN; Mitsumasa KOYANAGI

doi:https://doi.org/10.7567/SSDM.1996.Sympo.I-13

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜 1996年8月29日
Pacifico Yokohama, Yokohama, Japan

[Sympo.I-13] New Electrically-Thinned Intrinsic-Channel SOI MOSFET with 0.01μm Channel Length

Tamio SHIMATANI、Sergey PIDIN、Mitsumasa KOYANAGI (1.Dept. of Machine Intelligence and System Engineering, Intelligent System Design Laboratory, Tohoku University)

https://doi.org/10.7567/SSDM.1996.Sympo.I-13

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