Analysis of the Charge Density at Field Oxide/SOI and SOI/Buried Oxide Interfaces in Partially Depleted SOI MOSFET&apos;s with and without Hydrogenation

[Sympo.I-7] Analysis of the Charge Density at Field Oxide/SOI and SOI/Buried Oxide Interfaces in Partially Depleted SOI MOSFET's with and without Hydrogenation

T. Iwamatsu, T. Ipposhi, S. Miyamoto, Y. Yamaguchi, Y. Inoue, H. Miyoshi, A. Yasuoka (1.ULSI Laboratory, Mitsubishi Electric Corporation)