Analysis of the Charge Density at Field Oxide/SOI and SOI/Buried Oxide Interfaces in Partially Depleted SOI MOSFET&apos;s with and without Hydrogenation

[Sympo.I-7] Analysis of the Charge Density at Field Oxide/SOI and SOI/Buried Oxide Interfaces in Partially Depleted SOI MOSFET's with and without Hydrogenation

T. Iwamatsu、T. Ipposhi、S. Miyamoto、Y. Yamaguchi、Y. Inoue、H. Miyoshi、A. Yasuoka (1.ULSI Laboratory, Mitsubishi Electric Corporation)