[A-10-2] Formation of Low-Resistivity Gate Electrode Suitable for the Future Devices Using Clustered DCS-Wsix Polycide

Jeong Soo Byun、Byung Hak Lee、Ji-Soo Park、Dong-Kyun Sohn、Jae Jeong Kim (1.Process Gr., Adv. Tech. Lab., LG Semicon. Co. Ltd.)

https://doi.org/10.7567/SSDM.1997.A-10-2