A Reliable Double Level Interconnection Technology for Giga Bit DRAMs Using SiO2 Mask Al Etching and PECVD SiOF

Takashi Yokoyama; Yoshiaki Yamada; Koji Kishimoto; Hideaki Kawamoto; Hideki Gomi; Kazuyoshi Ueno

doi:https://doi.org/10.7567/SSDM.1997.A-10-5

[A-10-5] A Reliable Double Level Interconnection Technology for Giga Bit DRAMs Using SiO2 Mask Al Etching and PECVD SiOF

Takashi Yokoyama, Yoshiaki Yamada, Koji Kishimoto, Hideaki Kawamoto, Hideki Gomi, Kazuyoshi Ueno (1.NEC Corporation, ULSI Device Development Laboratories)

https://doi.org/10.7567/SSDM.1997.A-10-5

1997 International Conference on Solid State Devices and Materials

[A-10-5] A Reliable Double Level Interconnection Technology for Giga Bit DRAMs Using SiO2 Mask Al Etching and PECVD SiOF