[A-2-2] Highly Reliable Interpoly Oxide Using ECR N2O-Plasma for Next Generation Flash Memory

Nae-In Lee, Jin-Woo Lee, Sung-Hoi Hur, Hyoung-Sub Kim, Chul-Hi Han (1.Department of Electrical Engineering, KAIST, 2.Semiconductor R & D Center, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.1997.A-2-2