[A-2-2] Highly Reliable Interpoly Oxide Using ECR N2O-Plasma for Next Generation Flash Memory

Nae-In Lee、Jin-Woo Lee、Sung-Hoi Hur、Hyoung-Sub Kim、Chul-Hi Han (1.Department of Electrical Engineering, KAIST、2.Semiconductor R & D Center, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.1997.A-2-2