[A-4-2] Byte Erasable NOR Flash EEPROM with Double Diffused Drain for High Programming Speed

M. K. Cho、K. H. Yum、K. S. Kim、J. H. Choi、S. T. Ahn、Dae M. Kim (1.Memory Division, Semiconductor Business, Samsung Electronics Co., LTD.、2.Department of Electrical Eng., Pohang University of Science and Technology)

https://doi.org/10.7567/SSDM.1997.A-4-2