Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET

Hideki Matsuhashi; Akio Gotoh; Chang-hun Lee; Michio Yokoyama; Kazuya Masu; Kazuo Tsubouchi

doi:https://doi.org/10.7567/SSDM.1997.A-6-4

1997 International Conference on Solid State Devices and Materials

Sep 16, 1997 - Sep 19, 1997
ACT CITY Hamamatsu, Hamamatsu, Japan

[A-6-4] Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET

Hideki Matsuhashi, Akio Gotoh, Chang-hun Lee, Michio Yokoyama, Kazuya Masu, Kazuo Tsubouchi (1.Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1997.A-6-4

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