Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET

Hideki Matsuhashi; Akio Gotoh; Chang-hun Lee; Michio Yokoyama; Kazuya Masu; Kazuo Tsubouchi

doi:https://doi.org/10.7567/SSDM.1997.A-6-4

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜 1997年9月19日
ACT CITY Hamamatsu, Hamamatsu, Japan

[A-6-4] Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET

Hideki Matsuhashi、Akio Gotoh、Chang-hun Lee、Michio Yokoyama、Kazuya Masu、Kazuo Tsubouchi (1.Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1997.A-6-4

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