[A-6-5] Improvement of Bit-Line Contact Resistance for Memory Devices with Silicide Gate

T. H. Kim、Y. J. Choi、C. Y. Moon、H. C. Koh、J. H. Jin、B. I. Ryu (1.DRAM Product Engineering, Memory Business, Samsung Electronics)

https://doi.org/10.7567/SSDM.1997.A-6-5