[A-6-5] Improvement of Bit-Line Contact Resistance for Memory Devices with Silicide Gate

T. H. Kim, Y. J. Choi, C. Y. Moon, H. C. Koh, J. H. Jin, B. I. Ryu (1.DRAM Product Engineering, Memory Business, Samsung Electronics)

https://doi.org/10.7567/SSDM.1997.A-6-5