A Process Integration of (Ba, Sr) TiO3 Capacitor into 256M DRAM

Cheol Seong Hwang; Byoung Taek Lee; Hideki Horii; Ki Hoon Lee; Wan don Kim; Hag-Ju Cho; Chang Seok Kang; Sang In Lee; Moon Yong Lee

doi:https://doi.org/10.7567/SSDM.1997.A-8-2

1997 International Conference on Solid State Devices and Materials

Sep 16, 1997 - Sep 19, 1997
ACT CITY Hamamatsu, Hamamatsu, Japan

[A-8-2] A Process Integration of (Ba, Sr) TiO3 Capacitor into 256M DRAM

Cheol Seong Hwang, Byoung Taek Lee, Hideki Horii, Ki Hoon Lee, Wan don Kim, Hag-Ju Cho, Chang Seok Kang, Sang In Lee, Moon Yong Lee (1.SAMSUNG Electronics, Co., Semiconductor R&D Center, MPD Team)

https://doi.org/10.7567/SSDM.1997.A-8-2

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