[B-1-4] A Proposal of Pt/SrBi2Ta2O9/CeO2/Si Structure for Non Destructive Read Out Memory Devices

Dong Suk Shin、Yong Hee Han、Yong Tae Kim (1.Semiconductor Materials Laboratory, Korea Institute of Science and Technology、2.Korea Department of Materials Science, Korea University)

https://doi.org/10.7567/SSDM.1997.B-1-4