In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface

Naohiro Tsurumi; Yasuhiko Ishikawa; Takashi Fukui; Hideki Hasegawa

doi:https://doi.org/10.7567/SSDM.1997.B-10-5

[B-10-5] In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface

Naohiro Tsurumi、Yasuhiko Ishikawa、Takashi Fukui、Hideki Hasegawa (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1997.B-10-5

1997 International Conference on Solid State Devices and Materials

[B-10-5] In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface