[B-13-4] Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation

Akira Fujiwara、Yasuo Takahashi、Hideo Namatsu、Kenji Kurihara、Katsumi Murase (1.NTT Basic Research Laboratories)

https://doi.org/10.7567/SSDM.1997.B-13-4