Sub-0.25 μm Devices and 16K SRAM with Selective-Epi Source/Drain on Ultra-Thin SOI

C. Raynaud; O. Faynot; JL. Pelloie; J. Margail; V. Ferlet; A. Quemeneur; R. Westhoff; McD. Robinson

doi:https://doi.org/10.7567/SSDM.1997.B-5-4

1997 International Conference on Solid State Devices and Materials

Sep 16, 1997 - Sep 19, 1997
ACT CITY Hamamatsu, Hamamatsu, Japan

[B-5-4] Sub-0.25 μm Devices and 16K SRAM with Selective-Epi Source/Drain on Ultra-Thin SOI

C. Raynaud, O. Faynot, JL. Pelloie, J. Margail, V. Ferlet, A. Quemeneur, R. Westhoff, McD. Robinson (1.LETI(CEA-Grenoble), 2.CEA Bruyeres le Chatel, 3.LSRL)

https://doi.org/10.7567/SSDM.1997.B-5-4

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