[C-10-4] Fabrication of Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistor (MEFISFET) Using Pt-SrBi2Ta2O9-Y2O3-Si Structure

Ho Nyung Lee、Yong Tae Kim、Chang Woo Lee、Myoung-Ho Lim、T. S. Kalkur (1.Semiconductor Materials Laboratory, Korea Institute of Science and Technology、2.Department of Physics, Korea University、3.Department of Electrical and Computer Eng., Colorado State University at Colorado Springs)

https://doi.org/10.7567/SSDM.1997.C-10-4