[C-11-4] High Performance 0.2 μm Dual Gate CMOS by Suppression of Transient-Enhanced-Diffusion Using Rapid Thermal Annealing Technologies
Y. Nishida, H. Sayama, S. Shimizu, T. Kuroi, A. Furukawa, A. Teramoto, T. Uchida, Y. Inoue, T. Nishimura
(1.ULSI Laboratory and Advanced Technology R&D Center, Mitsubishi Electric Corporation)
https://doi.org/10.7567/SSDM.1997.C-11-4
