Uniform Si-SEG and Ti/SEG-Si Thickness Ratio Control for Ti-Salicided Sub-Quarter-Micron CMOS Devices

Hitoshi Wakabayashi; Takeshi Andoh; Tohru Mogami; Toru Tatsumi; Takemitsu Kunio

doi:https://doi.org/10.7567/SSDM.1997.C-12-3

[C-12-3] Uniform Si-SEG and Ti/SEG-Si Thickness Ratio Control for Ti-Salicided Sub-Quarter-Micron CMOS Devices

Hitoshi Wakabayashi、Takeshi Andoh、Tohru Mogami、Toru Tatsumi、Takemitsu Kunio (1.Microelectronics Research Laboratories and ULSI Device Development Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1997.C-12-3

1997 International Conference on Solid State Devices and Materials

[C-12-3] Uniform Si-SEG and Ti/SEG-Si Thickness Ratio Control for Ti-Salicided Sub-Quarter-Micron CMOS Devices