[C-3-5] Heavily p-Type Doped AlAs Growth on GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors

Akimasa Mizutani、Nobuaki Hatori、Noriyuki Ohnoki、Nobuhiko Nishiyama、Nobuyuki Ohtake、Fumio Koyama、Kenichi Iga (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1997.C-3-5