[C-9-1] Improvement of Reliability of MOSFET's with N2O Nitrided Gate Oxide and N2O Polysilicon Gate Reoxidation

Chao Sung Lai、T. S. Chao、Tan Fu Lei、Cheng Len Lee、T. W. Huang、C. Y. Chang (1.National Nano Device Laboratory、2.Department of Electronics Engineering, National Chiao Tung University)

https://doi.org/10.7567/SSDM.1997.C-9-1