New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD MOSFET&apos;s

C. M. Yih; C. L. Wang; Steve S. Chung; C. C. Wu; W. Tan; H. J. Wu; S. Pi; Daniel Huang

doi:https://doi.org/10.7567/SSDM.1997.C-9-2

[C-9-2] New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD MOSFET's

C. M. Yih, C. L. Wang, Steve S. Chung, C. C. Wu, W. Tan, H. J. Wu, S. Pi, Daniel Huang (1.Department of Electronics Engineering, National Chiao Tung University, 2.Mosel-Vitelic)

https://doi.org/10.7567/SSDM.1997.C-9-2

1997 International Conference on Solid State Devices and Materials

[C-9-2] New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD MOSFET's