New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD MOSFET&apos;s

C. M. Yih; C. L. Wang; Steve S. Chung; C. C. Wu; W. Tan; H. J. Wu; S. Pi; Daniel Huang

doi:https://doi.org/10.7567/SSDM.1997.C-9-2

[C-9-2] New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD MOSFET's

C. M. Yih、C. L. Wang、Steve S. Chung、C. C. Wu、W. Tan、H. J. Wu、S. Pi、Daniel Huang (1.Department of Electronics Engineering, National Chiao Tung University、2.Mosel-Vitelic)

https://doi.org/10.7567/SSDM.1997.C-9-2

1997 International Conference on Solid State Devices and Materials

[C-9-2] New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD MOSFET's