[D-10-4] High-Performance Recessed Gate HFETs with New Doped Channel Structure

Makoto Inai、Hidehiko Sasaki、Hiroyuki Seto、Fujio Okui Susumu Fukuda、Hisashi Ariyoshi (1.RF Semiconductor Products Dept., Circuit Products Division, Murata Mfg. Co. Ltd.)

https://doi.org/10.7567/SSDM.1997.D-10-4