High-Performance Recessed Gate HFETs with New Doped Channel Structure

Makoto Inai; Hidehiko Sasaki; Hiroyuki Seto; Fujio Okui Susumu Fukuda; Hisashi Ariyoshi

doi:https://doi.org/10.7567/SSDM.1997.D-10-4

1997 International Conference on Solid State Devices and Materials

Sep 16, 1997 - Sep 19, 1997
ACT CITY Hamamatsu, Hamamatsu, Japan

[D-10-4] High-Performance Recessed Gate HFETs with New Doped Channel Structure

Makoto Inai, Hidehiko Sasaki, Hiroyuki Seto, Fujio Okui Susumu Fukuda, Hisashi Ariyoshi (1.RF Semiconductor Products Dept., Circuit Products Division, Murata Mfg. Co. Ltd.)

https://doi.org/10.7567/SSDM.1997.D-10-4

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