Effects of Segregated Ge on Electrical Properties of SiO2/SiGe Interface

C. G. Ahn; H. S. Kang; Y. K. Kwon; B. K. Kang

doi:https://doi.org/10.7567/SSDM.1997.D-12-1

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜 1997年9月19日
ACT CITY Hamamatsu, Hamamatsu, Japan

[D-12-1] Effects of Segregated Ge on Electrical Properties of SiO2/SiGe Interface

C. G. Ahn、H. S. Kang、Y. K. Kwon、B. K. Kang (1.Pohang University of Science and Technology, Department of Electrical Engineering、2.Uiduk University, Department of Electronics)

https://doi.org/10.7567/SSDM.1997.D-12-1

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