The Analysis of Defective Cell Induced by COP in 0.3 microns Technology Node DRAM

Masaya Muranaka; Masashi Miura; Hidetoshi Iwai; Masao Kawamura; Yoshitaka Tadaki; Toshiyuki Kaeriyama

doi:https://doi.org/10.7567/SSDM.1997.D-7-4

[D-7-4] The Analysis of Defective Cell Induced by COP in 0.3 microns Technology Node DRAM

Masaya Muranaka、Masashi Miura、Hidetoshi Iwai、Masao Kawamura、Yoshitaka Tadaki、Toshiyuki Kaeriyama (1.ULSI Development Dept., Hitachi ULSI Engineering Corp.、2.Device Development Center Hitachi Ltd.、3.Manufacturing Capability Development, Semiconductor Group, Texas Instruments Inc., located at Device Development Center, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1997.D-7-4

1997 International Conference on Solid State Devices and Materials

[D-7-4] The Analysis of Defective Cell Induced by COP in 0.3 microns Technology Node DRAM