[C-9-3] High-Temperature Behaviors of GaN Schottky Barrier Diode

Kouichi Nakamura, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno (1.Department of Electrical and Computer Engineering, Nagoya Institute of Technology, 2.Research Center for Micro-Structure Devices, Nagoya Institute of Technology, 3.Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-9-4] Anomalous Electrochemical Behavior of N-Type GaN Films on α-Al2O3 Substrates

A. Yamamoto, Y. Tsuji, T. Sugiura, A. Hashimoto (1.Department of Electrical and Electronics Engineering, Faculty of Engineering Fukui University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-9-5] High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl2 and CH4 Plasma

Durga Basak, Kenji Yamashita, Tomoya Sugahara, Daisuke Nakagawa, Tao Wang, Katsushi Nishino, Shiro Sakai (1.Satellite Venture Business Laboratory Department of Electrical and Electronic Engineering The University of Tokushima)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-9-6] Theoretical Models for the Electron Drift and Hall Mobility in N-Type 4H- and 6H-SiC

K. M. Itoh, T. Kinoshita, J. Muto, M. Schadt, G. Pensl (1.Dept. Applied Physics and Physico-Informatics., Keio University, 2.Institut fur Angewndte Physik, Universitat Erlangen-Nurnberg)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-9-7] Effect of Surface Treatment of Field Emission Properties of CVD Diamond

Hideki KAWAMURA, Tetsuro MAKI, Takeshi KOBAYASHI (1.Graduate school of Engineering Science, Osaka University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-9-8] Electrical Stabilization of Diamond MIS Interface by Employing BaF2 Insulator Film and Application to Diamond MISFETs

Hiroyuki Tanaka, Akihiro Ito, Young Yun, Tetsuro Maki, Takeshi Kobayashi (1.Graduate School of Engineering Science, Osaka University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-10-1] Electronic Applications of GaN Devices

Umesh K. Mishra (1.ECE Department)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-10-2] Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD

Takashi Egawa, Kouichi Nakamura, Hiroyasu Ishikawa, Takashi Jimbo, Masayoshi Umeno (1.Research Center for Micro-Structure Devices, Nagoya Institute of Technology, 2.Department of Electrical and Computer Engineering, Nagoya Institute of Technology, 3.Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-10-3] Interface Properties of Metal/n-GaN Schottky Contacts

Yuji Koyama, Tamotsu Hashizume, Hideki Hasegawa (1.Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Information Engineering, Hokkaido University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-10-4] Effect of Process Temperature on SiC MOS Properties

X. W. Wang, Xin Guo, T. P. Ma G. J. Cui, T. Tamagawa, B. Halpern, Y. Takahashi (1.Department of Electrical Engineering, Yale University, 2.Jet Process Corporation, 3.Department of Electronics Engineering, Nihon University)

1998 International Conference on Solid State Devices and Materials |PDF Download