[A-6-3] Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization

Shin-ichi Nakao, Masashi Numata, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-6-4] Fluoropolymer and Aerogel Thin Films as Low Dielection in IC Metallization

S. E. Schulz, A. Bertz, R. Streiter, M. Uhlig, U. Weiss, T. Werner, T. Winkler, T. Gessner (1.Center of Microtechnologies, Chemnitz University of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-6-5] A Fluorinated Organic-Silica Film with Extremely Low Dielectric-Constant

Yasutaka Uchida, Kohshi Taguchi, Masakiyo Matsumura (1.Dept. of Electronics and Information Science, Teikyo University of Science and Technology, 2.Dept. of Physical Electronics, Tokyo Institute of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-6-6] Thermal and Bias-Temperature Stress Induced Leakage Current Failure of Cu/BCB Single Damascene Integration

Sang U. Kim, Taiheui Cho, Paul Ho (1.Advanced Technology, SEMATECH, 2.Intel Corporation, 3.U of Texas, Material Science and Eng)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-7-1] Salicide Technologies for Deep-Sub-Micron-CMOS

Jorge A. Kittl, Michael A. Gribelyuk, Donald Miles, Chih-Ping Chao, Mark Rodder, Qi-Zhong Hong, Hong Yang, Sunil Hattangady, Ning Yu (1.Silicon Technology Development, Texas Instruments Inc.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-7-2] Transmission Electron Microscopic Study of TiSi2 Microstructures and the C49-C54 Phase Transformation in Narrow Lines

M. Okihara, K. Tai, M. Kageyama, Y. Harada, N. Hirashita, H. Onoda (1.VLSI Research & Development Center, LSI Production Division, Oki Electric Industry Co., Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-7-3] Low Contact Resistance Poly-Metal Gate CMOS Using TiN/Thin TiSi2/Poly-Si Structure

Fumio Ohtake, Yasuo Nara (1.Fujitsu Laboratories Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-7-4] A Novel Clean Ti Salicide Process Using Grooved Gate Structure

K. Hizawa, H. Matsuhashi, S. Nishikawa (1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-7-5] Highly Uniform Deposition of LP-CVD 3i3N4 Films on Tungsten for Advanced Low Resistivity "Poly-Metal" Gate Interconnects

Yasushi Akasaka, Kiyotaka Miyano, Kazuaki Nakajima, Kyoichi Suguro (1.Microelectronics Engineering Laboratory, Toshiba Corp.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-7-6] Multilevel Aluminum Dual-Damascene Interconnects (Al-DDI) for Process-Step Reduction in 0.18um-ULSIs

Kazutoshi Shiba, Hitoshi Wakabayashi, Toshiyuki Takewaki, Kuniko Kikuta, Akira Kubo, Shinya Yamasaki, Yoshihiro Hayashi (1.Silicon Systems Research Laboratories and ULSI Device Development Laboratories, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download