[A-1-2] High-k Gated Germanium Metal-Oxide-Semiconductor Capacitors with GeO₂ Surface Passivation and Fluorine Incorporation

R. Xie^1,2、W. He¹、M. Yu²、C. Zhu¹ (1.National Univ. of Singapore、2.Inst. of Microelectronics, Singapore)

https://doi.org/10.7567/SSDM.2008.A-1-2