[A-1-3] Improvement of Interface Properties of GeO₂/Ge MOS Structures Fabricated by Thermal Oxidation

T. Sasada¹, H. Matsubara¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, Japan)

https://doi.org/10.7567/SSDM.2008.A-1-3