[A-2-2] Impact of the Activation Annealing Temperature on the Performance, NBTI and TDDB Lifetime of High-k/Metal Gate Stack pMOSFETs

M. Sato¹、T. Aoyama¹、Y. Nara¹、Y. Ohji¹ (1.Selete, Japan)

https://doi.org/10.7567/SSDM.2008.A-2-2