The Japan Society of Applied Physics

[A-2-3] Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric

C. Y. Kang1、C. S. Park1、H. K. Park1、S. C. Song1、R. Choi1、B. H. Park2、B. Woo2、K. T. Lee3、J. Lee4、H. Hwang4、G. Bersuker1、B. H. Lee1、H. H. Tseng1、R. Jammy5 (1.SEMATECH、2.Poongsan Microtech, USA、3.POSTECH、4.GIST, Korea、5.IBM Assignee, USA)

https://doi.org/10.7567/SSDM.2008.A-2-3