Vt Variation Suppressed Al2O3-Capped HfO2 Gate Dielectrics for Low Vt pMISFETs with High-k/Metal Gate Stacks

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

T. Morooka¹, T. Matsuki¹, N. Mise¹, S. Kamiyama¹, T. Nabatame¹, T. Eimori¹, Y. Nara¹, Y. Ohji¹ (1.Selete, Japan)