Trap Generation in Sc2O3/La2O3 High-κ Gate Stack by Nanoscale Electrical Stress

Y. C. Ong; D. S. Ang; S. J. O'Shea; K. L. Pey; C. H. Tung; T. Kawanago; K. Kakushima; H. Iwai

doi:https://doi.org/10.7567/SSDM.2008.A-3-4

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-3-4] Trap Generation in Sc₂O₃/La₂O₃ High-κ Gate Stack by Nanoscale Electrical Stress

Y. C. Ong¹, D. S. Ang¹, S. J. O'Shea², K. L. Pey¹, C. H. Tung³, T. Kawanago⁴, K. Kakushima⁴, H. Iwai⁴ (1.Nanyang Tech. Univ., 2.Inst. of Materials Res. and Eng., 3.Inst. of Microelectronics, Singapore, 4.Tokyo Tech., Japan)

https://doi.org/10.7567/SSDM.2008.A-3-4

▲

2008 International Conference on Solid State Devices and Materials

[A-3-4] Trap Generation in Sc2O3/La2O3 High-κ Gate Stack by Nanoscale Electrical Stress

[A-3-4] Trap Generation in Sc₂O₃/La₂O₃ High-κ Gate Stack by Nanoscale Electrical Stress