Trap Generation in Sc2O3/La2O3 High-κ Gate Stack by Nanoscale Electrical Stress

Y. C. Ong; D. S. Ang; S. J. O'Shea; K. L. Pey; C. H. Tung; T. Kawanago; K. Kakushima; H. Iwai

doi:https://doi.org/10.7567/SSDM.2008.A-3-4

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-3-4] Trap Generation in Sc₂O₃/La₂O₃ High-κ Gate Stack by Nanoscale Electrical Stress

Y. C. Ong¹、D. S. Ang¹、S. J. O'Shea²、K. L. Pey¹、C. H. Tung³、T. Kawanago⁴、K. Kakushima⁴、H. Iwai⁴ (1.Nanyang Tech. Univ.、2.Inst. of Materials Res. and Eng.、3.Inst. of Microelectronics, Singapore、4.Tokyo Tech., Japan)

https://doi.org/10.7567/SSDM.2008.A-3-4

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2008 International Conference on Solid State Devices and Materials

[A-3-4] Trap Generation in Sc2O3/La2O3 High-κ Gate Stack by Nanoscale Electrical Stress

[A-3-4] Trap Generation in Sc₂O₃/La₂O₃ High-κ Gate Stack by Nanoscale Electrical Stress