The Japan Society of Applied Physics

[A-3-4] Trap Generation in Sc2O3/La2O3 High-κ Gate Stack by Nanoscale Electrical Stress

Y. C. Ong1、D. S. Ang1、S. J. O'Shea2、K. L. Pey1、C. H. Tung3、T. Kawanago4、K. Kakushima4、H. Iwai4 (1.Nanyang Tech. Univ.、2.Inst. of Materials Res. and Eng.、3.Inst. of Microelectronics, Singapore、4.Tokyo Tech., Japan)

https://doi.org/10.7567/SSDM.2008.A-3-4