Defect Profiling and the Role of Nitrogen in Lanthanum Oxide-capped High-κ Dielectrics for nMOS Applications

B. J. O'Sullivan; R. Mitsuhashi; H. Okawa; N. Sengoku; T. Schram; G. Groeseneken; S. Biesemans; T. Nakabayashi; A. Ikeda; M. Niwa

doi:https://doi.org/10.7567/SSDM.2008.A-5-1

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-5-1] Defect Profiling and the Role of Nitrogen in Lanthanum Oxide-capped High-κ Dielectrics for nMOS Applications

B. J. O'Sullivan¹、R. Mitsuhashi²、H. Okawa²、N. Sengoku²、T. Schram¹、G. Groeseneken^1,3、S. Biesemans¹、T. Nakabayashi²、A. Ikeda²、M. Niwa² (1.IMEC, Belgium、2.Matsushita Electric Co., Ltd., Japan、3.Katholieke Univ., Belgium)

https://doi.org/10.7567/SSDM.2008.A-5-1

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