Defect Profiling and the Role of Nitrogen in Lanthanum Oxide-capped High-κ Dielectrics for nMOS Applications

B. J. O'Sullivan; R. Mitsuhashi; H. Okawa; N. Sengoku; T. Schram; G. Groeseneken; S. Biesemans; T. Nakabayashi; A. Ikeda; M. Niwa

doi:https://doi.org/10.7567/SSDM.2008.A-5-1

[A-5-1] Defect Profiling and the Role of Nitrogen in Lanthanum Oxide-capped High-κ Dielectrics for nMOS Applications

B. J. O'Sullivan¹, R. Mitsuhashi², H. Okawa², N. Sengoku², T. Schram¹, G. Groeseneken^1,3, S. Biesemans¹, T. Nakabayashi², A. Ikeda², M. Niwa² (1.IMEC, Belgium, 2.Matsushita Electric Co., Ltd., Japan, 3.Katholieke Univ., Belgium)

https://doi.org/10.7567/SSDM.2008.A-5-1

2008 International Conference on Solid State Devices and Materials

[A-5-1] Defect Profiling and the Role of Nitrogen in Lanthanum Oxide-capped High-κ Dielectrics for nMOS Applications