[A-7-4] V_fb Lowering Effect of TaC/Rare Earth Metal/TaC Laminated Gate Electrode Applicable to N-MISFET with HfSiON and its Physical Origins before and after High-Temperature Annealing

R. Ichihara¹、M. Koyama¹ (1.Toshiba Corp., Japan)

https://doi.org/10.7567/SSDM.2008.A-7-4