[A-9-3] Carbon-Free Tantalum-Nitride Film from Ammonia and Extremely Diluted Pentakis-dimethylamino-Tantalum; Effect of Silicon Incorporation to nMIS-FET Metal-Gate

Y. Sugita¹、T. Aoyama¹、Y. Nara¹ (1.Selete, Japan)

https://doi.org/10.7567/SSDM.2008.A-9-3