[A-9-3] Carbon-Free Tantalum-Nitride Film from Ammonia and Extremely Diluted Pentakis-dimethylamino-Tantalum; Effect of Silicon Incorporation to nMIS-FET Metal-Gate
Y. Sugita1, T. Aoyama1, Y. Nara1
(1.Selete, Japan)
https://doi.org/10.7567/SSDM.2008.A-9-3
