The Japan Society of Applied Physics

[B-1-2] Enhancement-Mode In0.53Ga0.47As n-MOSFET with Self-aligned Gate-first Process and CVD HfAlO Gate Dielectric

J. Lin1、S. J. Lee1、H. J. Oh1、G. K. Dalapati2、D. Z. Chi2、G. Q. Lo3、D. L. Kwong3 (1.National Univ. of Singapore、2.Inst. of Materials Res. and Eng.、3.Inst. of Microelectronics, Singapore)

https://doi.org/10.7567/SSDM.2008.B-1-2