[B-1-3] High Mobility sub-60nm Gate Length Germanium-On-Insulator Channel pMOSFETs with Metal Source/Drain and TaN MIPS Gate

K. Ikeda¹、Y. Yamashita¹、M. Harada¹、T. Yamamoto¹、S. Nakaharai¹、N. Hirashita¹、Y. Moriyama¹、T. Tezuka¹、N. Taoka²、I. Watanabe³、N. Hirose³、N. Sugiyama¹、S. Takagi^2,4 (1.MIRAI-ASET、2.MIRAI-ASRC、3.NICT、4.Univ. of Tokyo, Japan)

https://doi.org/10.7567/SSDM.2008.B-1-3