[B-1-3] High Mobility sub-60nm Gate Length Germanium-On-Insulator Channel pMOSFETs with Metal Source/Drain and TaN MIPS Gate

K. Ikeda¹, Y. Yamashita¹, M. Harada¹, T. Yamamoto¹, S. Nakaharai¹, N. Hirashita¹, Y. Moriyama¹, T. Tezuka¹, N. Taoka², I. Watanabe³, N. Hirose³, N. Sugiyama¹, S. Takagi^2,4 (1.MIRAI-ASET, 2.MIRAI-ASRC, 3.NICT, 4.Univ. of Tokyo, Japan)

https://doi.org/10.7567/SSDM.2008.B-1-3