Accuracy Assessment of Charge-Based Capacitance Measurement for Nanoscale MOSFET Devices

H. Zhao; S. C. Rustagi; F. Ma; G. S. Samudra; N. Singh; G. Q. Lo; D. L. Kwong

doi:https://doi.org/10.7567/SSDM.2008.B-10-1

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-10-1] Accuracy Assessment of Charge-Based Capacitance Measurement for Nanoscale MOSFET Devices

H. Zhao^1,2、S. C. Rustagi¹、F. Ma^1,2、G. S. Samudra²、N. Singh¹、G. Q. Lo¹、D. L. Kwong¹ (1.Inst. of Microelectronics、2.National Univ. of Singapore, Singapore)

https://doi.org/10.7567/SSDM.2008.B-10-1

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