[B-10-4] Impacts of Random Dopant Fluctuation on Transient Characteristics in CMOS Inverters: A Device Simulation Study

S. Toriyama¹, K. Matsuzawa¹, N. Sano² (1.Toshiba Corp., 2.Univ. of Tsukuba, Japan)

https://doi.org/10.7567/SSDM.2008.B-10-4