Physical and Electrical Design of FinFET based SRAM Bitcell for 22nm Node and Below

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

S. C. Song¹、M. Abu-Rahma¹、B. M. Han¹、S. S. Yoon¹、J. Wang¹、W. Yang²、C. Hu²、G. Yeap¹ (1.Qualcomm Inc.、2.Univ. of California Berkeley, USA)